naina semiconductor ltd. MBR3545 thru mbr35100r 1 d-95, sector 63, noida C 201301, india ? tel: 012 0-4205450 ? fax: 0120-4273653 sales@nainasemi.com ? www.nainasemi.com schottky power diode, 35a features ? fast switching ? low forward voltage drop ? high surge capability ? high efficiency, low power loss ? normal and reverse polarity maximum ratings (t j = 25 o c, unless otherwise noted) parameter test conditions symbol MBR3545(r) mbr3560(r) mbr3580(r) mbr35100(r) unit repetitive peak reverse voltage v rrm 45 60 80 100 v rms reverse voltage v rms 32 42 57 70 v dc blocking voltage v dc 45 60 80 100 v continuous forward current t c 110 o c i f 35 35 35 35 a surge non-repetitive forward current, half-sine wave t c = 25 o c i fsm 600 600 600 600 a forward voltage i f = 35 a t j = 25 o c v f 0.68 0.75 0.84 0.84 v reverse current v r = 20v, t j = 25 o c i r 1.5 1.5 1.5 1.5 ma v r = 20v, t j = 125 o c 25 25 25 25 thermal & mechanical specifications (t j = 25 o c, unless otherwise noted) parameters symbol MBR3545(r) mbr3560(r) mbr3580(r) mbr35100(r) unit maximum thermal resistance, junction to case r th(jc) 1.5 o c/ w operating junction temperature range t j -55 to 150 o c storage temperature t stg -55 to 175 o c mounting torque (non-lubricated threads) f 2.0 nm approximate allowable weight w 5.0 g do - 203aa (do - 4)
naina semiconductor ltd. MBR3545 thru mbr35100r 2 d-95, sector 63, noida C 201301, india ? tel: 012 0-4205450 ? fax: 0120-4273653 sales@nainasemi.com ? www.nainasemi.com package outline all dimensions in mm
|
